Thanks to Samsung’s latest innovation, there soon will be smartphones with the same amount of storage as an average netbook laptop. Samsung Electronics announced that it has begun mass producing the industry’s first 256GB internal storage, which are chips based on the Universal Flash Storage (UFS) 2.0 standard. These memory chips will be used in next-generation high-end mobile devices like the iPhone 10 or Samsung Galaxy S9. These chips aren’t just bigger when it comes to storage, the chips are also extremely fast compared to previous to other storage standards. Samsung claims that these chips are twice as fast as stand computers SSDs. “By providing high-density UFS memory that is nearly twice as fast as a SATA SSD for PCs, we will contribute to a paradigm shift within the mobile data storage market,” said Joo Sun Choi, Executive Vice President, Memory Sales and Marketing, Samsung Electronics.

UFS 2.0 also now supports up to 45,000 and 40,000 input/output operations per second (IOPS) for random reading and writing, respectively. That is twice as fast as previous UFS generation which can only support 19,000 and 14,000 IOPS. As for for sequential reading, the new UFS 2.0 chips can transfer data at 850MB/s, nearly twice as fast as a standard SATA-based SSD. Samsung claims that it’s three times faster than high-performance external micro SD cards, when it comes to sequential writing.

The chip also takes advantage of the transfer speeds offered by USB 3.0. According to Samsung, a 5GB file will be transferred in just 12 seconds to your device from another USB 3.0 device.

Since Samsung has Apple, a company known for making their smartphones as lighter as possible, the chip is now even smaller than before. The chip is “even smaller than an external micro SD card, giving greater flexibility to smartphone designers.”

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